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| Philips Semiconductors Product specification Triacs BT138F series GENERAL DESCRIPTION Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT138FBT138FBT138FRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 12 90 600 600F 600G 600 12 90 800 800F 800G 800 12 90 VDRM IT(RMS) ITSM V A A PINNING - SOT186 PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 123 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 56 C full sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 12 90 100 40 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. February 1996 1 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 12 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT138FVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 10 22 7 20 8 10 6 1.4 0.7 0.4 0.1 35 35 35 70 40 60 40 60 30 MAX. ...F 25 25 25 70 40 60 40 60 30 1.65 1.5 0.5 ...G 50 50 50 100 60 90 60 90 60 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current February 1996 2 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of change of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT138FVDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 12 A; dIcom/dt = 5.4 A/ms; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s dVcom/dt - - 10 20 - V/s tgt - - - 2 - s February 1996 3 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series 20 Ptot / W BT138 Ths(max) / C = 180 45 15 IT(RMS) / A BT138X 56 C 65 15 1 120 90 60 10 85 10 30 5 5 105 0 0 5 IT(RMS) / A 10 125 15 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. BT138 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. 1000 ITSM / A 25 IT(RMS) / A BT138 20 15 100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time 10 5 Tj initial = 125 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A BT138 IT 80 T ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 56C. VGT(Tj) VGT(25 C) 100 1.6 1.4 1.2 1 BT136 Tj initial = 125 C max 60 40 0.8 20 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. February 1996 4 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series 3 2.5 2 1.5 1 IGT(Tj) IGT(25 C) BT138 T2+ G+ T2+ GT2- GT2- G+ 40 IT / A Tj = 125 C Tj = 25 C BT138 typ max 30 Vo = 1.175 V Rs = 0.0316 Ohms 20 10 0.5 0 -50 0 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 TRIAC 10 Zth j-hs (K/W) BT138 with heatsink compound without heatsink compound 1 unidirectional 0.1 P D tp bidirectional 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. dV/dt (V/us) off-state dV/dt limit BT138...G SERIES BT138 SERIES 3 2.5 2 1.5 1 0.5 TRIAC 1000 100 BT138...F SERIES dIcom/dt = 15 A/ms 10 12 9.1 7 5.4 4.2 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. February 1996 5 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3 0.55 max Fig.13. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1996 6 Rev 1.100 Philips Semiconductors Product specification Triacs BT138F series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Rev 1.100 |
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